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| Data Sheet POWER FACTOR CORRECTION CONTROLLER General Description The AP1661 is an active power factor control IC which is designed mainly for use as pre-converter in electronic ballast, AC-DC adapters and off-line SMPS applications. The AP1661 includes an internal start-up timer for stand-alone applications, a one-quadrant multiplier to realize near unity power factor and a zero current detector to ensure DCM boundary conduction operation. The totem pole output stage is capable of driving power MOSFET with 600mA source current and 800mA sink current. Designed with advanced BiCMOS process, the AP1661 features low start-up current, low operation current and low power dissipation. The AP1661 also has rich protection features including over-voltage protection, input under-voltage lockout with hysteresis and multiplier output clamp to limit maximum peak current. This IC is available in SOIC-8 and DIP-8 packages. AP1661 Features * * * * * * * * * Zero Current Detection Control for DCM Boundary Conduction Mode Adjustable Output Voltage with Precise OverVoltage Protection Low Start-up Current with 50A Typical Value Low Operating Supply Current with 4mA Typical Value 1% Precision Internal Reference Voltage Internal Start-up Timer Disable Function for Reduced Current Consumption Totem Pole Output with 600mA Source Current and 800mA Sink Current Capability Under-Voltage Lockout with 2.5V of Hysteresis Applications * * * AC-DC Adapter Off-line SMPS Electronic Ballast SOIC-8 DIP-8 Figure 1. Package Types of AP1661 Aug. 2008 Rev. 1. 1 1 BCD Semiconductor Manufacturing Limited Data Sheet POWER FACTOR CORRECTION CONTROLLER Pin Configuration AP1661 M Package/P Package (SOIC-8/DIP-8) INV COMP MULT CS 1 2 3 4 8 7 6 5 VCC GD GND ZCD Figure 2. Pin Configuration of AP1661 (Top View) Pin Description Pin Number 1 2 3 4 5 6 7 8 Pin Name INV COMP MULT CS ZCD GND GD VCC Output of the error amplifier Input of the multiplier Input of the current control loop comparator Zero current detection input. If it is connected to GND, the device is disabled Ground. Current return for gate driver and control circuits of the IC Gate driver output Supply voltage of gate driver and control circuits of the IC Function Inverting input of the error amplifier Aug. 2008 Rev. 1. 1 2 BCD Semiconductor Manufacturing Limited Data Sheet POWER FACTOR CORRECTION CONTROLLER Functional Block Diagram COMP 2 INV 1 Multiplier MULT 3 4 CS AP1661 Voltage Regulation VCC 8 22V Overvoltage Detection RQ S 13V VCC Internal R1 Supply 7.5V 7 Driver R2 Vref Zero Current Detector 2.1V 1.6V Enable 5 ZCD Figure 3. Functional Block Diagram of AP1661 GD Starter Disable 6 GND Ordering Information AP1661 E1: Lead Free G1: Green TR: Tape and Reel Blank: Tube Circuit Type Package M: SOIC-8 P: DIP-8 Package Temperature Range -40 to 85oC -40 to 85oC Part Number Lead Free AP1661M-E1 AP1661MTR-E1 AP1661P-E1 Green AP1661M-G1 AP1661MTR-G1 AP1661P-G1 Marking ID Lead Free 1661M-E1 1661M-E1 AP1661P-E1 Green 1661M-G1 1661M-G1 AP1661P-G1 Packing Type Tube Tape & Reel Tube SOIC-8 DIP-8 BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. Aug. 2008 Rev. 1. 1 3 BCD Semiconductor Manufacturing Limited Data Sheet POWER FACTOR CORRECTION CONTROLLER Absolute Maximum Ratings (Note 1) Parameter Power Supply Voltage Operating Supply Current Driver Output Current Input/Output of Error Amplifier, Input of Multiplier Current Sense Input Zero Current Detector Input Thermal Resistance Junction-Ambient Power Dissipation and Thermal Characteristics @ TA=50oC Operating Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10 Seconds) ESD (Human Body Model) ESD (Machine Model) Symbol VCC ICC IOUT VINV, VCOMP, VMULT VCS IZCD RJA PTOT TJ TSTG TLEAD Source Sink DIP-8 SOIC-8 DIP-8 SOIC-8 -40 to150 -65 to 150 260 3000 300 Value 20 30 Unit V mA mA V V -50 10 100 150 1 0.65 W oC oC o AP1661 800 -0.3 to 7 -0.3 to 7 mA oC/W C V V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Aug. 2008 Rev. 1. 1 4 BCD Semiconductor Manufacturing Limited Data Sheet POWER FACTOR CORRECTION CONTROLLER Electrical Characteristics VCC=14.5V, TA=-25oC to 125oC, unless otherwise specified. Parameter Turn-on Threshold Turn-off Threshold Hysterisis VCC Operating Range Total Supply Section Start-up Current Operating Supply Current Quiescent Current Quiescent Current VCC Zener Voltage Error Amplifier Section Voltage Feedback Input Threshold Line Regulation Input Bias Current Voltage Gain Gain Bandwidth Output Voltage Upper Clamp Voltage Lower Clamp Voltage Source Current Sink Current IINV GV GB VCOMP-H VCOMP-L ICOMP-H ICOMP-L VINV-TH VMULT 0 to 3 VMULT: 0 to 0.5V, VCOMP=Upper Clamp Voltage VMULT=1V, VCOMP=4V 0.45 0 to 3.5 1.7 0.6 0.75 1/V ISOURCE=0.5mA ISINK=0.5mA VCOMP=4V, VINV=2.4V VCOMP=4V, VINV=2.6V -2 2.5 VINV TA=25 oC 10.3V Under Voltage Lockout Section Output Current Enable Threshold Multiplier Section Linear Input Voltage Range Output Maximum Slope Gain VCS/ VMULT k Aug. 2008 Rev. 1. 1 5 BCD Semiconductor Manufacturing Limited Data Sheet POWER FACTOR CORRECTION CONTROLLER Electrical Characteristics (Continued) VCC=14.5V, TA=-25oC to 125oC, unless otherwise specified. Parameter Current Sense Section Input Bias Current Current Sense Offset Voltage Current Sense Reference Clamp Delay to Output ICS VCS-OFFSET VCS-CLAMP td(H-L) VCS =0V VMULT=0V VMULT=2.5V VCOMP=Upper Clamp Voltage, VMULT=2.5V 1.6 -0.05 30 5 1.7 200 1.8 450 V ns -1.0 A mV Symbol Test Conditions Min Typ Max Unit AP1661 Zero Current Detection Section Input Threshold Voltage, VZCD Rising Edge Hysteresis Voltage Upper Clamp Voltage Lower Clamp Voltage Source Current Capability Sink Current Capability Sink Bias Current Disable Threshold Disable Hysterisis Restart Current After Disable Drive Output Section Dropout Voltage VOH VOL Output Voltage Rise Time Output Voltage Fall Time Output Clamp Voltage UVLO Saturation Output Over Voltage Section OVP Triggering Current Static OVP Threshold Restart Timer Restart Timer tSTART 70 150 400 s IOVP VOVP_TH 35 2.1 40 2.25 45 2.4 A V tR tF VO-CLAMP VOS IGD-SOURCE=200 mA, VCC=12V IGD-SOURCE=20 mA, VCC=12V IGD-SINK=200 mA, VCC=12V CL=1nF CL=1nF IGD-SOURCE=5 mA, VCC=20V VCC=0 to VCC-ON, ISINK=10mA 10 2.5 2 0.9 40 40 13 3 2.6 1.9 100 100 15 1.1 V ns ns V V V VZCD-R VZCD-RTH VZCD-H VZCD-L IZCD-SR IZCD-SN IZCD-B VZCD-DIS VZCD-HYS IZCD-RES VZCD Note 2: Limits over the full temperature are guaranteed by design, but not tested in production. Aug. 2008 Rev. 1. 1 6 BCD Semiconductor Manufacturing Limited Data Sheet POWER FACTOR CORRECTION CONTROLLER Typical Performance Characteristics AP1661 33.5 33.0 32.5 32.0 31.5 6 5 Supply Current (mA) -20 0 20 40 60 O 4 IOVP (A) 31.0 30.5 30.0 29.5 29.0 28.5 -40 3 2 1 0 80 100 120 140 0 5 10 15 20 25 Temperature ( C) Supply Voltage (V) Figure 4. OVP Current Threshold vs. Temperature Figure 5. Supply Current vs. Supply Voltage 12.5 2.550 VCC-ON 12.0 2.525 2.500 11.5 Voltage (v) 11.0 Voltage (V) VCC-OFF -40 -20 0 20 40 60 O 2.475 2.450 2.425 10.5 2.400 10.0 2.375 9.5 -60 80 100 120 140 2.350 -40 -20 0 20 40 60 O 80 100 120 140 Temperature ( C) Temperature ( C) Figure 6. Under Voltage Lockout Threshold vs. Temperature Figure 7. Voltage Feedback Input Threshold vs. Temperature Aug. 2008 Rev. 1. 1 7 BCD Semiconductor Manufacturing Limited Data Sheet POWER FACTOR CORRECTION CONTROLLER Typical Performance Characteristics (Continued) AP1661 4.5 4.0 0.0 -0.5 3.5 3.0 -1.0 Voltage (V) 2.5 2.0 1.5 1.0 Voltage (V) 0 100 200 300 400 500 -1.5 -2.0 -2.5 0.5 0.0 -3.0 0 100 200 300 400 500 Current (mA) Current (mA) Figure 8. Output Saturation Voltage vs. Sink Current Figure 9. Output Saturation Voltage vs. Source Current 1.8 1.6 1.4 1.2 VCS (V) 1.0 0.8 0.6 0.4 0.2 0.0 0.0 VCOMP=2.6 VCOMP=2.8 VCOMP=3 VCOMP=3.2 VCOMP=3.5 VCOMP=4 VCOMP=4.5 VCOMP=5 VCOMP=MAX 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VMULT (V) Figure 10. Multiplier Characteristics Family Aug. 2008 Rev. 1. 1 8 BCD Semiconductor Manufacturing Limited Data Sheet POWER FACTOR CORRECTION CONTROLLER Functional Block Description AP1661 is a high performance power factor correction controller which operates in DCM boundary conduction mode. The PFC converter's switch will be turned on when the inductor current reduces to zero and turned off when the sensed inductor current reaches the required reference which is decided by the output of multiplier. AP1661 dynamic OVP is trigged. The IC will be disabled and the drive signal is stopped. If the output over voltage lasts so long that the output of error amplifier goes below 2.25V, static OVP will take place. Also the IC will be disabled until the output of error amplifier goes back to its linear region. R1 and R2 (see Fig. 11) will be selected as below: R1 Vo = -1 R 2 2.5V Error Amplifier and Over-Voltage Protection The error amplifier regulates the PFC output voltage. The internal reference on the non-inverting input of the error amplifier is 2.5V. The error amplifier's inverting input (INV) is connected to an external resistor divider which senses the output voltage. The output of error amplifier is one of the two inputs of multiplier. A compensation loop is connected outside between INV and the error amplifier output. Normally, the compensation loop bandwidth is set very low to realize high power factor for PFC converter. To make the over voltage protection fast, the internal OVP function is added. If the output over voltage happens, excess current will flow into the output pin of the error amplifier through the feedback compensation capacitor. (see Figure 11) The AP1661 monitors the current flowing into the error amplifier output pin. When the detected current is higher than 40A, the R1 = VOVP 40 A Multiplier The multiplier has two inputs. One (Pin 3) is the divided AC sinusoidal voltage which makes the current sense comparator threshold voltage vary from zero to peak value. The other input is the output of error amplifier (Pin 2). In this way, the input average current wave will be sinusoidal as well as reflects the load status. Accordingly a high power factor and good THD are achieved. The multiplier transfer character is designed to be linear over a wide dynamic range, namely, 0 V to 3V for Pin 3 and 2.0 V to 5.8 V for Pin 2. The relationship between the multiplier output and inputs is described as below equation. VCS = k x (VCOMP - 2.5) x VMULT VO I COMP Error Amplifier IOVP 2 MULT 3 Driver Multiplier PWM R1 INV 1 R2 2.5V where VCS (Multiplier output) is the reference for the current sense, k is the multiplier gain, VCOMP is the voltage on pin 2 (error amplifier output) and VMULT is the voltage on pin 3. Current Sense/Current Sense Comparator The PFC switch's turn-on current is sensed through an external resistor in series with the switch. When the sensed voltage exceeds the threshold voltage (the multiplier output), the current sense comparator will become low and the external MOSFET will be turned off. This insures a cycle-by-cycle current mode control operation. The maximum current sense reference is 1.8V. The max value usually happens at startup process or abnormal conditions such as short load. 2.25V IOVP + 40A AP1661 Figure 11. Error Amplifier and OVP Block Aug. 2008 Rev. 1. 1 9 BCD Semiconductor Manufacturing Limited Data Sheet POWER FACTOR CORRECTION CONTROLLER Functional Block Description (Continued) Zero Current Detection AP1661 is a DCM boundary conduction current mode PFC controller. Usually, the zero current detection (ZCD) voltage signal comes from the auxiliary winding of the boost inductor. When the ZCD pin AP1661 voltage decreases below 1.6V, the gate drive signal becomes high to turn on the external MOSFET. 500mV of hysteresis is provided to avoid false triggering. The ZCD pin can be used for disabling the IC. Making its voltage below 0.15V or short to the ground will disable the device thus reduce the IC supply current consumption. Typical Application L2 160H L3 R6 180K L1 500H F1 2.5A/250V NTC C2 220nF 500V C3 330nF 500V R4 680K C1 220nF/275V D1 R3 1M R7 180K C6 R8 12nF 100 C7 680nF C8 330nF INV GD CS GND C4 100nF R13 10 Q1 11N65C3 D2 MUR460 R1 820K R14 12K R2 470K JC2 D3 1N4148 Z1 15V R9 68K ZCD COMP VCC MULT C9 47F 450V R10 8.2K JC1 85 to 265V AC L N GND R5 10K C10 22F 25V U1 AP1661 R16 0.33/1W L3: Core type RM10, material 3C90 primary: 660uH, 66 turns of litze wire 0.1mm*30 secondary: 7 turns wire of 0.2mm Figure 12. 85 to 265V Wide Range Input 90W PFC Demo Board Electrical Schematic Circuit Aug. 2008 Rev. 1. 1 10 BCD Semiconductor Manufacturing Limited Data Sheet POWER FACTOR CORRECTION CONTROLLER Mechanical Dimensions DIP-8 Unit: mm(inch) AP1661 0.700(0.028) 7.620(0.300)TYP 1.524(0.060) TYP 6 6 5 3.710(0.146) 4.310(0.170) 4 3.200(0.126) 3.600(0.142) 4 3.000(0.118) 3.600(0.142) 0.510(0.020)MIN 0.254(0.010)TYP 0.360(0.014) 0.560(0.022) 2.540(0.100) TYP 0.130(0.005)MIN 0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370) R0.750(0.030) 3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.400(0.370) 6.200(0.244) 6.600(0.260) Aug. 2008 Rev. 1. 1 11 BCD Semiconductor Manufacturing Limited Data Sheet POWER FACTOR CORRECTION CONTROLLER Mechanical Dimensions (Continued) SOIC-8 Unit: mm(inch) AP1661 4.700(0.185) 5.100(0.201) 7 1.350(0.053) 1.750(0.069) 0.320(0.013) 8 7 8 0.675(0.027) 0.725(0.029) D 5.800(0.228) 6.200(0.244) D 20:1 1.270(0.050) TYP 0.100(0.004) 0.300(0.012) R0.150(0.006) 0.800(0.031) 0.200(0.008) 1.000(0.039) 3.800(0.150) 4.000(0.157) 0 8 0.330(0.013) 0.510(0.020) 0.190(0.007) 0.250(0.010) 0.900(0.035) 1 5 R0.150(0.006) 0.450(0.017) 0.800(0.031) Aug. 2008 Rev. 1. 1 12 BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE - Headquarters BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Limited Tel: +86-21-24162266, Fax: +86-21-24162277 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 REGIONAL SALES OFFICE Shenzhen Office REGIONAL SALES OFFICE - Wafer Fab BCD Semiconductor Manufacturing Limited Shanghai Design Group - IC SIM-BCD Semiconductor Manufacturing Co., Ltd. 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 900, Yi Shan Road, Shanghai 200233, China 8F, Zone B, 1491, Fax: +86-21-5450 0008 Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 USA Office BCD Semiconductor Corp. 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